G52YT

Global Power Technology-GPT

Produkt-Nr.:

G52YT

Hersteller:

Paket:

SMA

Charge:

Datenblatt:

Beschreibung:

DIODE SIL CARBIDE 650V 5.8A SMA

Menge:

Lieferung:

Zahlung:

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Speed	No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)	0 ns
Capacitance @ Vr, F	116.75pF @ 0V, 1MHz
Mounting Type	Surface Mount
Product Status	Active
Supplier Device Package	SMA
Current - Reverse Leakage @ Vr	50 µA @ 650 V
Series	-
Package / Case	DO-214AC, SMA
Technology	SiC (Silicon Carbide) Schottky
Voltage - Forward (Vf) (Max) @ If	1.7 V @ 2 A
Mfr	Global Power Technology-GPT
Voltage - DC Reverse (Vr) (Max)	650 V
Package	Cut Tape (CT)
Operating Temperature - Junction	-55°C ~ 175°C
Current - Average Rectified (Io)	5.8A