G5S6506Z

Global Power Technology-GPT

Produkt-Nr.:

G5S6506Z

Hersteller:

Paket:

8-DFN (4.9x5.75)

Charge:

Datenblatt:

Beschreibung:

DIODE SIL CARB 650V 30.5A 8DFN

Menge:

Lieferung:

Zahlung:

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Speed	No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)	0 ns
Capacitance @ Vr, F	395pF @ 0V, 1MHz
Mounting Type	Surface Mount
Product Status	Active
Supplier Device Package	8-DFN (4.9x5.75)
Current - Reverse Leakage @ Vr	50 µA @ 650 V
Series	-
Package / Case	8-PowerTDFN
Technology	SiC (Silicon Carbide) Schottky
Voltage - Forward (Vf) (Max) @ If	1.5 V @ 6 A
Mfr	Global Power Technology-GPT
Voltage - DC Reverse (Vr) (Max)	650 V
Package	Cut Tape (CT)
Operating Temperature - Junction	-55°C ~ 175°C
Current - Average Rectified (Io)	30.5A