GA05JT12-263

GeneSiC Semiconductor

Produkt-Nr.:

GA05JT12-263

Hersteller:

Paket:

TO-263-7

Charge:

Datenblatt:

Beschreibung:

TRANS SJT 1200V 15A D2PAK

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Operating Temperature	175°C (TJ)
FET Feature	-
FET Type	-
Mounting Type	Surface Mount
Product Status	Obsolete
Rds On (Max) @ Id, Vgs	-
Supplier Device Package	TO-263-7
Vgs(th) (Max) @ Id	-
Drain to Source Voltage (Vdss)	1200 V
Series	-
Power Dissipation (Max)	106W (Tc)
Package / Case	TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Technology	SiC (Silicon Carbide Junction Transistor)
Mfr	GeneSiC Semiconductor
Current - Continuous Drain (Id) @ 25°C	15A (Tc)
Vgs (Max)	-
Drive Voltage (Max Rds On, Min Rds On)	-
Package	Tube
Base Product Number	GA05JT12