GB02SHT01-46

GeneSiC Semiconductor

Produkt-Nr.:

GB02SHT01-46

Hersteller:

Paket:

TO-46

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Beschreibung:

DIODE SIL CARBIDE 100V 4A TO46

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Speed	No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)	0 ns
Capacitance @ Vr, F	76pF @ 1V, 1MHz
Mounting Type	Through Hole
Product Status	Obsolete
Supplier Device Package	TO-46
Current - Reverse Leakage @ Vr	5 µA @ 100 V
Series	-
Package / Case	TO-206AB, TO-46-3 Metal Can
Technology	SiC (Silicon Carbide) Schottky
Voltage - Forward (Vf) (Max) @ If	1.6 V @ 1 A
Mfr	GeneSiC Semiconductor
Voltage - DC Reverse (Vr) (Max)	100 V
Package	Bulk
Operating Temperature - Junction	-55°C ~ 210°C
Current - Average Rectified (Io)	4A
Base Product Number	GB02SHT01