GB02SLT12-220

GeneSiC Semiconductor

Produkt-Nr.:

GB02SLT12-220

Hersteller:

Paket:

TO-220-2

Charge:

Datenblatt:

Beschreibung:

DIODE SIL CARB 1.2KV 2A TO220-2

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Speed	No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)	0 ns
Capacitance @ Vr, F	138pF @ 1V, 1MHz
Mounting Type	Through Hole
Product Status	Obsolete
Supplier Device Package	TO-220-2
Current - Reverse Leakage @ Vr	50 µA @ 1200 V
Series	-
Package / Case	TO-220-2
Technology	SiC (Silicon Carbide) Schottky
Voltage - Forward (Vf) (Max) @ If	1.8 V @ 2 A
Mfr	GeneSiC Semiconductor
Voltage - DC Reverse (Vr) (Max)	1200 V
Package	Tube
Operating Temperature - Junction	-55°C ~ 175°C
Current - Average Rectified (Io)	2A
Base Product Number	GB02SLT12