GBL02E-E3/P

Vishay General Semiconductor - Diodes Division

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GBL02E-E3/P

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Paket:

GBL

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Beschreibung:

BRIDGE RECT 1PHASE 200V 3A GBL

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Operating Temperature	-55°C ~ 150°C (TJ)
Voltage - Peak Reverse (Max)	200 V
Diode Type	Single Phase
Mounting Type	Through Hole
Product Status	Active
Supplier Device Package	GBL
Current - Reverse Leakage @ Vr	5 µA @ 200 V
Series	-
Package / Case	4-SIP, GBL
Technology	Standard
Voltage - Forward (Vf) (Max) @ If	1 V @ 4 A
Mfr	Vishay General Semiconductor - Diodes Division
Package	Bulk
Current - Average Rectified (Io)	2.6 A