GT50J341,Q

Toshiba Semiconductor and Storage

Produkt-Nr.:

GT50J341,Q

Hersteller:

Paket:

TO-3P(N)

Charge:

Datenblatt:

Beschreibung:

PB-F IGBT / TRANSISTOR TO-3PN IC

Menge:

Lieferung:

Zahlung:

Auf Lager : Bitte Anfrage

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Operating Temperature	175°C (TJ)
Test Condition	-
Input Type	Standard
Switching Energy	-
Current - Collector (Ic) (Max)	50 A
Mounting Type	Through Hole
Product Status	Active
Voltage - Collector Emitter Breakdown (Max)	600 V
Td (on/off) @ 25°C	-
Supplier Device Package	TO-3P(N)
Current - Collector Pulsed (Icm)	100 A
Series	-
Vce(on) (Max) @ Vge, Ic	2.2V @ 15V, 50A
Package / Case	TO-3P-3, SC-65-3
Power - Max	200 W
Mfr	Toshiba Semiconductor and Storage
Package	Tube
IGBT Type	-