H7N1002LSTL-E

Renesas Electronics America Inc

Produkt-Nr.:

H7N1002LSTL-E

Hersteller:

Paket:

LDPAK

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Datenblatt:

Beschreibung:

MOSFET N-CH 100V 75A 4LDPAK

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Operating Temperature	150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	9700 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs	155 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	10mOhm @ 37.5A, 10V
Supplier Device Package	LDPAK
Vgs(th) (Max) @ Id	-
Drain to Source Voltage (Vdss)	100 V
Series	-
Power Dissipation (Max)	100W (Tc)
Package / Case	SC-83
Technology	MOSFET (Metal Oxide)
Mfr	Renesas Electronics America Inc
Current - Continuous Drain (Id) @ 25°C	75A (Ta)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	H7N1002