HGT1S10N120BNS

Fairchild Semiconductor

Produkt-Nr.:

HGT1S10N120BNS

Hersteller:

Paket:

TO-263AB

Charge:

Datenblatt:

Beschreibung:

IGBT, 35A, 1200V, N-CHANNEL, TO-

Menge:

Lieferung:

Zahlung:

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Operating Temperature	-55°C ~ 150°C (TJ)
Test Condition	960V, 10A, 10Ohm, 15V
Input Type	Standard
Switching Energy	320µJ (on), 800µJ (off)
Current - Collector (Ic) (Max)	35 A
Mounting Type	Surface Mount
Product Status	Active
Voltage - Collector Emitter Breakdown (Max)	1200 V
Td (on/off) @ 25°C	23ns/165ns
Supplier Device Package	TO-263AB
Current - Collector Pulsed (Icm)	80 A
Series	-
Vce(on) (Max) @ Vge, Ic	2.7V @ 15V, 10A
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Gate Charge	100 nC
Power - Max	298 W
Mfr	Fairchild Semiconductor
Package	Bulk
IGBT Type	NPT
Base Product Number	HGT1S10