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HGTP7N60A4

Fairchild Semiconductor

Produkt-Nr.:

HGTP7N60A4

Paket:

TO-220-3

Charge:

-

Datenblatt:

-

Beschreibung:

INSULATED GATE BIPOLAR TRANSISTO

Menge:

Lieferung:

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Zahlung:

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Produkt informationen

Parameter-Info

Benutzer handbuch

Operating Temperature -55°C ~ 150°C (TJ)
Test Condition 390V, 7A, 25Ohm, 15V
Input Type Standard
Switching Energy 55µJ (on), 60µJ (off)
Current - Collector (Ic) (Max) 34 A
Mounting Type Through Hole
Product Status Active
Voltage - Collector Emitter Breakdown (Max) 600 V
Td (on/off) @ 25°C 11ns/100ns
Supplier Device Package TO-220-3
Current - Collector Pulsed (Icm) 56 A
Series -
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 7A
Package / Case TO-220-3
Gate Charge 37 nC
Power - Max 125 W
Mfr Fairchild Semiconductor
Package Bulk
IGBT Type -