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HN4B102J(TE85L,F)

Toshiba Semiconductor and Storage

Produkt-Nr.:

HN4B102J(TE85L,F)

Paket:

SMV

Charge:

-

Datenblatt:

-

Beschreibung:

PB-F POWER TRANSISTOR SMV MOQ=30

Menge:

Lieferung:

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Zahlung:

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Produkt informationen

Parameter-Info

Benutzer handbuch

Operating Temperature 150°C (TJ)
Frequency - Transition -
Current - Collector (Ic) (Max) 1.8A, 2A
Vce Saturation (Max) @ Ib, Ic 140mV @ 20mA, 600mA / 200mV @ 20mA, 600mA
Mounting Type Surface Mount
Product Status Active
Voltage - Collector Emitter Breakdown (Max) 30V
Supplier Device Package SMV
Series -
Transistor Type NPN, PNP
Package / Case SC-74A, SOT-753
Power - Max 750mW
Mfr Toshiba Semiconductor and Storage
Current - Collector Cutoff (Max) 100nA (ICBO)
Package Tape & Reel (TR)
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 200mA, 2V
Base Product Number HN4B102