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HUF75339S3

Harris Corporation

Produkt-Nr.:

HUF75339S3

Hersteller:

Harris Corporation

Paket:

TO-262AA

Charge:

-

Datenblatt:

-

Beschreibung:

MOSFET N-CH 55V 70A TO262AA

Menge:

Lieferung:

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Zahlung:

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Produkt informationen

Parameter-Info

Benutzer handbuch

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 2000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 130 nC @ 20 V
Mounting Type Through Hole
Product Status Active
Rds On (Max) @ Id, Vgs 12mOhm @ 70A, 10V
Supplier Device Package TO-262AA
Vgs(th) (Max) @ Id 4V @ 250µA
Drain to Source Voltage (Vdss) 55 V
Series UltraFET™
Power Dissipation (Max) 124W (Tc)
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Technology MOSFET (Metal Oxide)
Mfr Harris Corporation
Current - Continuous Drain (Id) @ 25°C 70A (Tc)
Vgs (Max) ±20V
Package Bulk