HUF75343G3

Harris Corporation

Produkt-Nr.:

HUF75343G3

Hersteller:

Paket:

TO-247

Charge:

Datenblatt:

Beschreibung:

MOSFET N-CH 55V 75A TO247

Menge:

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Zahlung:

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	3000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	205 nC @ 20 V
Mounting Type	Through Hole
Product Status	Obsolete
Rds On (Max) @ Id, Vgs	9mOhm @ 75A, 10V
Supplier Device Package	TO-247
Vgs(th) (Max) @ Id	4V @ 250µA
Drain to Source Voltage (Vdss)	55 V
Series	-
Power Dissipation (Max)	270W (Tc)
Package / Case	TO-247-3
Technology	MOSFET (Metal Oxide)
Mfr	Harris Corporation
Current - Continuous Drain (Id) @ 25°C	75A (Tc)
Vgs (Max)	±20V
Package	Tube