Zuhause / FET, MOSFET Arrays / IAUC45N04S6N070HATMA1
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IAUC45N04S6N070HATMA1

Infineon Technologies

Produkt-Nr.:

IAUC45N04S6N070HATMA1

Paket:

PG-TDSON-8-57

Charge:

-

Datenblatt:

-

Beschreibung:

IAUC45N04S6N070HATMA1

Menge:

Lieferung:

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Zahlung:

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Auf Lager : 24511

Minimum: 1 Vielfache: 1

Menge

Stückpreis

Ext-Preis

  • 1

    $1.4725

    $1.4725

  • 10

    $1.2027

    $12.027

  • 100

    $0.93537

    $93.537

  • 500

    $0.792813

    $396.4065

  • 1000

    $0.645829

    $645.829

  • 2000

    $0.607972

    $1215.944

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Produkt informationen

Parameter-Info

Benutzer handbuch

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Configuration 2 N-Channel (Half Bridge)
Input Capacitance (Ciss) (Max) @ Vds 701pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V
Mounting Type Surface Mount
Product Status Active
Rds On (Max) @ Id, Vgs 7mOhm @ 22A, 10V
Supplier Device Package PG-TDSON-8-57
Vgs(th) (Max) @ Id 3V @ 9µA
Drain to Source Voltage (Vdss) 40V
Series Automotive, AEC-Q101, OptiMOS™
Package / Case 8-PowerVDFN
Technology MOSFET (Metal Oxide)
Power - Max 41W (Tc)
Mfr Infineon Technologies
Current - Continuous Drain (Id) @ 25°C 45A (Tj)
Package Tape & Reel (TR)
Base Product Number IAUC45