Zuhause / Single FETs, MOSFETs / IAUZ30N10S5L240ATMA1
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IAUZ30N10S5L240ATMA1

Infineon Technologies

Produkt-Nr.:

IAUZ30N10S5L240ATMA1

Paket:

PG-TSDSON-8-32

Charge:

-

Datenblatt:

-

Beschreibung:

MOSFET N-CH 100V 30A 8TSDSON-32

Menge:

Lieferung:

1.webp 4.webp 5.webp 2.webp 3.webp

Zahlung:

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Auf Lager : 4660

Minimum: 1 Vielfache: 1

Menge

Stückpreis

Ext-Preis

  • 1

    $1.3205

    $1.3205

  • 10

    $1.0773

    $10.773

  • 100

    $0.837805

    $83.7805

  • 500

    $0.710144

    $355.072

  • 1000

    $0.578493

    $578.493

  • 2000

    $0.544588

    $1089.176

Nicht der Preis, den Sie wollen? Senden Sie jetzt RFQ und wir werden Sie so schnell wie möglich kontaktieren.

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Produkt informationen

Parameter-Info

Benutzer handbuch

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 832 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs 14 nC @ 10 V
Mounting Type Surface Mount
Product Status Active
Rds On (Max) @ Id, Vgs 24mOhm @ 15A, 10V
Supplier Device Package PG-TSDSON-8-32
Vgs(th) (Max) @ Id 2.2V @ 15µA
Drain to Source Voltage (Vdss) 100 V
Series Automotive, AEC-Q101, OptiMOS™-5
Power Dissipation (Max) 45.5W (Tc)
Package / Case 8-PowerTDFN
Technology MOSFET (Metal Oxide)
Mfr Infineon Technologies
Current - Continuous Drain (Id) @ 25°C 30A (Tc)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
Base Product Number IAUZ30