Infineon Technologies
Produkt-Nr.:
IDH20G65C6XKSA1
Hersteller:
Paket:
PG-TO220-2
Charge:
-
Datenblatt:
-
Beschreibung:
DIODE SIL CARB 650V 41A TO220-2
Menge:
Lieferung:

Zahlung:
Minimum: 1 Vielfache: 1
Menge
Stückpreis
Ext-Preis
1
$7.5525
$7.5525
10
$6.4733
$64.733
100
$5.394195
$539.4195
500
$4.759595
$2379.7975
1000
$4.283636
$4283.636
2000
$4.01393
$8027.86
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| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Capacitance @ Vr, F | 970pF @ 1V, 1MHz |
| Mounting Type | Through Hole |
| Product Status | Active |
| Supplier Device Package | PG-TO220-2 |
| Current - Reverse Leakage @ Vr | 67 µA @ 420 V |
| Series | - |
| Package / Case | TO-220-2 |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - Forward (Vf) (Max) @ If | 1.35 V @ 20 A |
| Mfr | Infineon Technologies |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Package | Tube |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Current - Average Rectified (Io) | 41A |
| Base Product Number | IDH20G65 |