IDW12G65C5

Infineon Technologies

Produkt-Nr.:

IDW12G65C5

Hersteller:

Paket:

PG-TO247-3-41

Charge:

Datenblatt:

Beschreibung:

DIODE SIL CARB 650V 12A TO247-3

Menge:

Lieferung:

Zahlung:

Auf Lager : Bitte Anfrage

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Speed	No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)	0 ns
Capacitance @ Vr, F	360pF @ 1V, 1MHz
Mounting Type	Through Hole
Product Status	Active
Supplier Device Package	PG-TO247-3-41
Current - Reverse Leakage @ Vr	500 µA @ 650 V
Series	CoolSiC™+
Package / Case	TO-247-3
Technology	SiC (Silicon Carbide) Schottky
Voltage - Forward (Vf) (Max) @ If	1.7 V @ 12 A
Mfr	Infineon Technologies
Voltage - DC Reverse (Vr) (Max)	650 V
Package	Bulk
Operating Temperature - Junction	-55°C ~ 175°C
Current - Average Rectified (Io)	12A