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IGLR60R340D1XUMA1

Infineon Technologies

Produkt-Nr.:

IGLR60R340D1XUMA1

Paket:

PG-TSON-8-7

Charge:

-

Datenblatt:

-

Beschreibung:

GAN HV

Menge:

Lieferung:

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Zahlung:

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Produkt informationen

Parameter-Info

Benutzer handbuch

Operating Temperature -40°C ~ 150°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 87.7 pF @ 400 V
Mounting Type Surface Mount
Product Status Active
Rds On (Max) @ Id, Vgs -
Supplier Device Package PG-TSON-8-7
Vgs(th) (Max) @ Id 1.6V @ 530µA
Drain to Source Voltage (Vdss) 600 V
Series CoolGaN™
Power Dissipation (Max) 41.6W (Tc)
Package / Case 8-PowerTDFN
Technology GaNFET (Gallium Nitride)
Mfr Infineon Technologies
Current - Continuous Drain (Id) @ 25°C 8.2A (Tc)
Vgs (Max) -10V
Drive Voltage (Max Rds On, Min Rds On) -
Package Tape & Reel (TR)