IPA60R165CP

Infineon Technologies

Produkt-Nr.:

IPA60R165CP

Hersteller:

Paket:

PG-TO220 Full Pack

Charge:

Datenblatt:

Beschreibung:

MOSFET N-CH 600V 21A TO220

Menge:

Lieferung:

Zahlung:

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	2000 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs	52 nC @ 10 V
Mounting Type	Through Hole
Product Status	Active
Rds On (Max) @ Id, Vgs	165mOhm @ 12A, 10V
Supplier Device Package	PG-TO220 Full Pack
Vgs(th) (Max) @ Id	3.5V @ 790µA
Drain to Source Voltage (Vdss)	600 V
Series	CoolMOS™
Power Dissipation (Max)	34W (Tc)
Package / Case	TO-220-3 Full Pack
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	21A (Tc)
Vgs (Max)	±20V
Package	Bulk