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IPA60R180C7XKSA1

Infineon Technologies

Produkt-Nr.:

IPA60R180C7XKSA1

Paket:

PG-TO220 Full Pack

Charge:

-

Datenblatt:

-

Beschreibung:

MOSFET N-CH 600V 9A TO220-FP

Menge:

Lieferung:

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Zahlung:

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Auf Lager : 329

Minimum: 1 Vielfache: 1

Menge

Stückpreis

Ext-Preis

  • 1

    $3.0875

    $3.0875

  • 10

    $2.7759

    $27.759

  • 100

    $2.274015

    $227.4015

  • 500

    $1.935853

    $967.9265

  • 1000

    $1.632651

    $1632.651

  • 2000

    $1.551018

    $3102.036

  • 5000

    $1.492706

    $7463.53

Nicht der Preis, den Sie wollen? Senden Sie jetzt RFQ und wir werden Sie so schnell wie möglich kontaktieren.

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Produkt informationen

Parameter-Info

Benutzer handbuch

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 1080 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs 24 nC @ 10 V
Mounting Type Through Hole
Product Status Active
Rds On (Max) @ Id, Vgs 180mOhm @ 5.3A, 10V
Supplier Device Package PG-TO220 Full Pack
Vgs(th) (Max) @ Id 4V @ 260µA
Drain to Source Voltage (Vdss) 600 V
Series CoolMOS™ C7
Power Dissipation (Max) 29W (Tc)
Package / Case TO-220-3 Full Pack
Technology MOSFET (Metal Oxide)
Mfr Infineon Technologies
Current - Continuous Drain (Id) @ 25°C 9A (Tc)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube
Base Product Number IPA60R