IPAN50R500CEXKSA1

Infineon Technologies

Produkt-Nr.:

IPAN50R500CEXKSA1

Hersteller:

Paket:

PG-TO220-FP

Charge:

Datenblatt:

Beschreibung:

MOSFET N-CH 500V 11.1A TO220

Menge:

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Operating Temperature	-40°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	433 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs	18.7 nC @ 10 V
Mounting Type	Through Hole
Product Status	Not For New Designs
Rds On (Max) @ Id, Vgs	500mOhm @ 2.3A, 13V
Supplier Device Package	PG-TO220-FP
Vgs(th) (Max) @ Id	3.5V @ 200µA
Drain to Source Voltage (Vdss)	500 V
Series	CoolMOS™
Power Dissipation (Max)	28W (Tc)
Package / Case	TO-220-3 Full Pack
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	11.1A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	13V
Package	Tube
Base Product Number	IPAN50