IPB60R299CP

Infineon Technologies

Produkt-Nr.:

IPB60R299CP

Hersteller:

Paket:

PG-TO263-3-2

Charge:

Datenblatt:

Beschreibung:

N-CHANNEL POWER MOSFET

Menge:

Lieferung:

Zahlung:

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Operating Temperature	-40°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1100 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs	29 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	299mOhm @ 6.6A, 10V
Supplier Device Package	PG-TO263-3-2
Vgs(th) (Max) @ Id	3.5V @ 440µA
Drain to Source Voltage (Vdss)	600 V
Series	CoolMOS™
Power Dissipation (Max)	96W (Tc)
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	11A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Bulk