IPD040N03LG

Infineon Technologies

Produkt-Nr.:

IPD040N03LG

Hersteller:

Paket:

PG-TO252-3-11

Charge:

Datenblatt:

Beschreibung:

OPTLMOS N-CHANNEL POWER MOSFET

Menge:

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Zahlung:

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	3900 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs	38 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	4mOhm @ 30A, 10V
Supplier Device Package	PG-TO252-3-11
Vgs(th) (Max) @ Id	2.2V @ 250µA
Drain to Source Voltage (Vdss)	30 V
Series	OptiMOS® 3
Power Dissipation (Max)	79W (Tc)
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	90A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Bulk