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IPD30N06S3-24

Infineon Technologies

Produkt-Nr.:

IPD30N06S3-24

Paket:

PG-TO252-3-11

Charge:

-

Datenblatt:

-

Beschreibung:

N-CHANNEL POWER MOSFET

Menge:

Lieferung:

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Zahlung:

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Auf Lager : Bitte Anfrage

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Produkt informationen

Parameter-Info

Benutzer handbuch

Operating Temperature -
FET Feature -
FET Type N-Channel
Mounting Type Surface Mount
Product Status Active
Rds On (Max) @ Id, Vgs -
Supplier Device Package PG-TO252-3-11
Vgs(th) (Max) @ Id -
Drain to Source Voltage (Vdss) 55 V
Series OptiMOS-T
Power Dissipation (Max) -
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Technology MOSFET (Metal Oxide)
Mfr Infineon Technologies
Current - Continuous Drain (Id) @ 25°C 30A
Vgs (Max) -
Drive Voltage (Max Rds On, Min Rds On) -
Package Bulk