IPD60R180P7SE8228AUMA1

Infineon Technologies

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Paket:

PG-TO252-3

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Beschreibung:

MOSFET N-CH 600V 18A TO252-3

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Operating Temperature	-40°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1081 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs	25 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	180mOhm @ 5.6A, 10V
Supplier Device Package	PG-TO252-3
Vgs(th) (Max) @ Id	4V @ 280µA
Drain to Source Voltage (Vdss)	600 V
Series	CoolMOS™ P7
Power Dissipation (Max)	72W (Tc)
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	18A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR)
Base Product Number	IPD60R