minImg

IPD60R280PFD7SAUMA1

Infineon Technologies

Produkt-Nr.:

IPD60R280PFD7SAUMA1

Paket:

PG-TO252-3-344

Charge:

-

Datenblatt:

-

Beschreibung:

MOSFET N-CH 600V 12A TO252-3

Menge:

Lieferung:

1.webp 4.webp 5.webp 2.webp 3.webp

Zahlung:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

Auf Lager : 1894

Minimum: 1 Vielfache: 1

Menge

Stückpreis

Ext-Preis

  • 1

    $1.4915

    $1.4915

  • 10

    $1.23785

    $12.3785

  • 100

    $0.985055

    $98.5055

  • 500

    $0.833549

    $416.7745

  • 1000

    $0.707246

    $707.246

Nicht der Preis, den Sie wollen? Senden Sie jetzt RFQ und wir werden Sie so schnell wie möglich kontaktieren.

Certif02 Certif07 Certif03 Certif04 Certif08 Certif10 Certif09 Certif05 Certif06

Produkt informationen

Parameter-Info

Benutzer handbuch

Operating Temperature -40°C ~ 150°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 656 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs 15.3 nC @ 10 V
Mounting Type Surface Mount
Product Status Active
Rds On (Max) @ Id, Vgs 280mOhm @ 3.6A, 10V
Supplier Device Package PG-TO252-3-344
Vgs(th) (Max) @ Id 4.5V @ 180µA
Drain to Source Voltage (Vdss) 600 V
Series CoolMOS™ PFD7
Power Dissipation (Max) 51W (Tc)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Technology MOSFET (Metal Oxide)
Mfr Infineon Technologies
Current - Continuous Drain (Id) @ 25°C 12A (Tc)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tape & Reel (TR)
Base Product Number IPD60R