IPD60R750E6ATMA1

Infineon Technologies

Produkt-Nr.:

IPD60R750E6ATMA1

Hersteller:

Paket:

PG-TO252-3

Charge:

Datenblatt:

Beschreibung:

IPD60R750 - 600V COOLMOS N-CHANN

Menge:

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	373 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs	17.2 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	750mOhm @ 2A, 10V
Supplier Device Package	PG-TO252-3
Vgs(th) (Max) @ Id	3.5V @ 170µA
Drain to Source Voltage (Vdss)	600 V
Series	CoolMOS™ E6
Power Dissipation (Max)	48W (Tc)
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	5.7A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Bulk
Base Product Number	IPD60R