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IPG15N06S3L-45

Infineon Technologies

Produkt-Nr.:

IPG15N06S3L-45

Paket:

PG-TDSON-8-4

Charge:

-

Datenblatt:

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Beschreibung:

MOSFET 2N-CH 55V 15A TDSON-8

Menge:

Lieferung:

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Zahlung:

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Produkt informationen

Parameter-Info

Benutzer handbuch

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature Logic Level Gate
Configuration 2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds 1420pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
Mounting Type Surface Mount
Product Status Obsolete
Rds On (Max) @ Id, Vgs 45mOhm @ 10A, 10V
Supplier Device Package PG-TDSON-8-4
Vgs(th) (Max) @ Id 2.2V @ 10µA
Drain to Source Voltage (Vdss) 55V
Series OptiMOS™
Package / Case 8-PowerVDFN
Technology MOSFET (Metal Oxide)
Power - Max 21W
Mfr Infineon Technologies
Current - Continuous Drain (Id) @ 25°C 15A
Package Tape & Reel (TR)
Base Product Number IPG15N