IPG20N04S409ATMA1

Infineon Technologies

Produkt-Nr.:

IPG20N04S409ATMA1

Hersteller:

Paket:

PG-TDSON-8

Charge:

Datenblatt:

Beschreibung:

MOSFET N-CHANNEL_30/40V

Menge:

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Zahlung:

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
Configuration	2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds	2250pF @ 25V
Gate Charge (Qg) (Max) @ Vgs	28nC @ 10V
Mounting Type	Surface Mount
Product Status	Obsolete
Rds On (Max) @ Id, Vgs	8.6mOhm @ 17A, 10V
Supplier Device Package	PG-TDSON-8
Vgs(th) (Max) @ Id	4V @ 22µA
Drain to Source Voltage (Vdss)	40V
Series	Automotive, AEC-Q101, OptiMOS™
Package / Case	8-PowerTDFN
Technology	MOSFET (Metal Oxide)
Power - Max	54W (Tc)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	20A (Tc)
Package	Tape & Reel (TR)
Base Product Number	IPG20N