IPG20N06S3L-35

Infineon Technologies

Produkt-Nr.:

IPG20N06S3L-35

Hersteller:

Paket:

PG-TDSON-8-4

Charge:

Datenblatt:

Beschreibung:

MOSFET 2N-CH 55V 20A TDSON-8

Menge:

Lieferung:

Zahlung:

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	Logic Level Gate
Configuration	2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds	1730pF @ 25V
Gate Charge (Qg) (Max) @ Vgs	23nC @ 10V
Mounting Type	Surface Mount
Product Status	Obsolete
Rds On (Max) @ Id, Vgs	35mOhm @ 11A, 10V
Supplier Device Package	PG-TDSON-8-4
Vgs(th) (Max) @ Id	2.2V @ 15µA
Drain to Source Voltage (Vdss)	55V
Series	OptiMOS™
Package / Case	8-PowerVDFN
Technology	MOSFET (Metal Oxide)
Power - Max	30W
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	20A
Package	Tape & Reel (TR)
Base Product Number	IPG20N