IPG20N10S436AATMA1

Infineon Technologies

Produkt-Nr.:

IPG20N10S436AATMA1

Hersteller:

Paket:

PG-TDSON-8-10

Charge:

Datenblatt:

Beschreibung:

MOSFET 2N-CH 100V 20A 8TDSON

Menge:

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Zahlung:

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
Configuration	2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds	990pF @ 25V
Gate Charge (Qg) (Max) @ Vgs	15nC @ 10V
Mounting Type	Surface Mount, Wettable Flank
Product Status	Active
Rds On (Max) @ Id, Vgs	36mOhm @ 17A, 10V
Supplier Device Package	PG-TDSON-8-10
Vgs(th) (Max) @ Id	3.5V @ 16µA
Drain to Source Voltage (Vdss)	100V
Series	Automotive, AEC-Q101, OptiMOS™
Package / Case	8-PowerVDFN
Technology	MOSFET (Metal Oxide)
Power - Max	43W
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	20A
Package	Tape & Reel (TR)
Base Product Number	IPG20N