IPI70R950CE

Infineon Technologies

Produkt-Nr.:

IPI70R950CE

Hersteller:

Paket:

PG-TO262-3-1

Charge:

Datenblatt:

Beschreibung:

POWER FIELD-EFFECT TRANSISTOR

Menge:

Lieferung:

Zahlung:

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Operating Temperature	-40°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	328 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs	15.3 nC @ 10 V
Mounting Type	Through Hole
Product Status	Active
Rds On (Max) @ Id, Vgs	950mOhm @ 1.5A, 10V
Supplier Device Package	PG-TO262-3-1
Vgs(th) (Max) @ Id	3.5V @ 150mA
Drain to Source Voltage (Vdss)	700 V
Series	CoolMOS™
Power Dissipation (Max)	68W (Tc)
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	7.4A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Bulk