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IPL65R065CFD7AUMA1

Infineon Technologies

Produkt-Nr.:

IPL65R065CFD7AUMA1

Paket:

PG-VSON-4-1

Charge:

-

Datenblatt:

-

Beschreibung:

HIGH POWER_NEW

Menge:

Lieferung:

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Zahlung:

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Produkt informationen

Parameter-Info

Benutzer handbuch

Operating Temperature -40°C ~ 150°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 3288 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs 68 nC @ 10 V
Mounting Type Surface Mount
Product Status Active
Rds On (Max) @ Id, Vgs 65mOhm @ 16.4A, 10V
Supplier Device Package PG-VSON-4-1
Vgs(th) (Max) @ Id 4.5V @ 860µA
Drain to Source Voltage (Vdss) 650 V
Series CoolMOS™ CFD7
Power Dissipation (Max) 195W (Tc)
Package / Case 4-PowerTSFN
Technology MOSFET (Metal Oxide)
Mfr Infineon Technologies
Current - Continuous Drain (Id) @ 25°C 33A (Tc)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tape & Reel (TR)