IPN80R2K0P7ATMA1

Infineon Technologies

Produkt-Nr.:

IPN80R2K0P7ATMA1

Hersteller:

Paket:

PG-SOT223

Charge:

Datenblatt:

Beschreibung:

LOW POWER_NEW

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	175 pF @ 500 V
Gate Charge (Qg) (Max) @ Vgs	9 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	2Ohm @ 940mA, 10V
Supplier Device Package	PG-SOT223
Vgs(th) (Max) @ Id	3.5V @ 50µA
Drain to Source Voltage (Vdss)	800 V
Series	CoolMOS™ P7
Power Dissipation (Max)	6.4W (Tc)
Package / Case	TO-261-4, TO-261AA
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	3A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Bulk
Base Product Number	IPN80R2