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IPP026N10NF2SAKMA1

Infineon Technologies

Produkt-Nr.:

IPP026N10NF2SAKMA1

Paket:

PG-TO220-3

Charge:

-

Datenblatt:

-

Beschreibung:

TRENCH >=100V

Menge:

Lieferung:

1.webp 4.webp 5.webp 2.webp 3.webp

Zahlung:

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Auf Lager : 1730

Minimum: 1 Vielfache: 1

Menge

Stückpreis

Ext-Preis

  • 1

    $5.2725

    $5.2725

  • 10

    $4.4289

    $44.289

  • 100

    $3.58321

    $358.321

  • 500

    $3.185084

    $1592.542

  • 1000

    $2.727222

    $2727.222

  • 2000

    $2.567974

    $5135.948

Nicht der Preis, den Sie wollen? Senden Sie jetzt RFQ und wir werden Sie so schnell wie möglich kontaktieren.

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Produkt informationen

Parameter-Info

Benutzer handbuch

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 7300 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs 154 nC @ 10 V
Mounting Type Through Hole
Product Status Active
Rds On (Max) @ Id, Vgs 2.6mOhm @ 100A, 10V
Supplier Device Package PG-TO220-3
Vgs(th) (Max) @ Id 3.8V @ 169µA
Drain to Source Voltage (Vdss) 100 V
Series StrongIRFET™ 2
Power Dissipation (Max) 3.8W (Ta), 250W (Tc)
Package / Case TO-220-3
Technology MOSFET (Metal Oxide)
Mfr Infineon Technologies
Current - Continuous Drain (Id) @ 25°C 27A (Ta), 184A (Tc)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Package Tube
Base Product Number IPP026N