IPP029N06NAK5A1

Infineon Technologies

Produkt-Nr.:

IPP029N06NAK5A1

Hersteller:

Paket:

PG-TO220-3

Charge:

Datenblatt:

Beschreibung:

N-CHANNEL POWER MOSFET

Menge:

Lieferung:

Zahlung:

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	4100 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs	56 nC @ 10 V
Mounting Type	Through Hole
Product Status	Active
Rds On (Max) @ Id, Vgs	2.9mOhm @ 100A, 10V
Supplier Device Package	PG-TO220-3
Vgs(th) (Max) @ Id	2.8V @ 75µA
Drain to Source Voltage (Vdss)	60 V
Series	OptiMOS™
Power Dissipation (Max)	3W (Ta), 136W (Tc)
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	24A (Ta), 100A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Package	Bulk