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IPP034N03LGXKSA1

Infineon Technologies

Produkt-Nr.:

IPP034N03LGXKSA1

Paket:

PG-TO220-3-1

Charge:

-

Datenblatt:

-

Beschreibung:

MOSFET N-CH 30V 80A TO220-3

Menge:

Lieferung:

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Zahlung:

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Auf Lager : 469

Minimum: 1 Vielfache: 1

Menge

Stückpreis

Ext-Preis

  • 1

    $1.463

    $1.463

  • 10

    $1.31195

    $13.1195

  • 100

    $1.054785

    $105.4785

  • 500

    $0.86659

    $433.295

  • 1000

    $0.718038

    $718.038

  • 2000

    $0.668515

    $1337.03

  • 5000

    $0.643758

    $3218.79

  • 10000

    $0.619001

    $6190.01

Nicht der Preis, den Sie wollen? Senden Sie jetzt RFQ und wir werden Sie so schnell wie möglich kontaktieren.

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Produkt informationen

Parameter-Info

Benutzer handbuch

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 5300 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs 51 nC @ 10 V
Mounting Type Through Hole
Product Status Not For New Designs
Rds On (Max) @ Id, Vgs 3.4mOhm @ 30A, 10V
Supplier Device Package PG-TO220-3-1
Vgs(th) (Max) @ Id 2.2V @ 250µA
Drain to Source Voltage (Vdss) 30 V
Series OptiMOS™
Power Dissipation (Max) 94W (Tc)
Package / Case TO-220-3
Technology MOSFET (Metal Oxide)
Mfr Infineon Technologies
Current - Continuous Drain (Id) @ 25°C 80A (Tc)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tube
Base Product Number IPP034