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IPP040N06N3GXKSA1

Infineon Technologies

Produkt-Nr.:

IPP040N06N3GXKSA1

Paket:

PG-TO220-3

Charge:

-

Datenblatt:

-

Beschreibung:

MOSFET N-CH 60V 90A TO220-3

Menge:

Lieferung:

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Zahlung:

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Auf Lager : 345

Minimum: 1 Vielfache: 1

Menge

Stückpreis

Ext-Preis

  • 1

    $1.8335

    $1.8335

  • 10

    $1.64825

    $16.4825

  • 100

    $1.324775

    $132.4775

  • 500

    $1.088415

    $544.2075

  • 1000

    $0.901826

    $901.826

  • 2000

    $0.839629

    $1679.258

  • 5000

    $0.808536

    $4042.68

  • 10000

    $0.777432

    $7774.32

Nicht der Preis, den Sie wollen? Senden Sie jetzt RFQ und wir werden Sie so schnell wie möglich kontaktieren.

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Produkt informationen

Parameter-Info

Benutzer handbuch

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 11000 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs 98 nC @ 10 V
Mounting Type Through Hole
Product Status Not For New Designs
Rds On (Max) @ Id, Vgs 4mOhm @ 90A, 10V
Supplier Device Package PG-TO220-3
Vgs(th) (Max) @ Id 4V @ 90µA
Drain to Source Voltage (Vdss) 60 V
Series OptiMOS™
Power Dissipation (Max) 188W (Tc)
Package / Case TO-220-3
Technology MOSFET (Metal Oxide)
Mfr Infineon Technologies
Current - Continuous Drain (Id) @ 25°C 90A (Tc)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube
Base Product Number IPP040