IPP048N06L G

Infineon Technologies

Produkt-Nr.:

IPP048N06L G

Hersteller:

Paket:

PG-TO220-3-1

Charge:

Datenblatt:

Beschreibung:

MOSFET N-CH 60V 100A TO220-3

Menge:

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	7600 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs	225 nC @ 10 V
Mounting Type	Through Hole
Product Status	Obsolete
Rds On (Max) @ Id, Vgs	4.7mOhm @ 100A, 10V
Supplier Device Package	PG-TO220-3-1
Vgs(th) (Max) @ Id	2V @ 270µA
Drain to Source Voltage (Vdss)	60 V
Series	OptiMOS™
Power Dissipation (Max)	300W (Tc)
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	100A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tube
Base Product Number	IPP048N