IPP114N12N3G

Infineon Technologies

Produkt-Nr.:

IPP114N12N3G

Hersteller:

Paket:

PG-TO220-3-1

Charge:

Datenblatt:

Beschreibung:

IPP114N12 - 12V-300V N-CHANNEL P

Menge:

Lieferung:

Zahlung:

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	4310 pF @ 60 V
Gate Charge (Qg) (Max) @ Vgs	65 nC @ 10 V
Mounting Type	Through Hole
Product Status	Active
Rds On (Max) @ Id, Vgs	11.4mOhm @ 75A, 10V
Supplier Device Package	PG-TO220-3-1
Vgs(th) (Max) @ Id	4V @ 83µA
Drain to Source Voltage (Vdss)	120 V
Series	OptiMOS™ 3
Power Dissipation (Max)	136W (Tc)
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	75A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Bulk