IPP120P04P4L03AKSA2

Infineon Technologies

Produkt-Nr.:

IPP120P04P4L03AKSA2

Hersteller:

Paket:

PG-TO220-3-1

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Datenblatt:

Beschreibung:

MOSFET_(20V,40V)

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	15000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	234 nC @ 10 V
Mounting Type	Through Hole
Product Status	Active
Rds On (Max) @ Id, Vgs	3.4mOhm @ 100A, 10V
Supplier Device Package	PG-TO220-3-1
Vgs(th) (Max) @ Id	2.2V @ 340µA
Drain to Source Voltage (Vdss)	40 V
Series	OptiMOS®-P2
Power Dissipation (Max)	136W (Tc)
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	120A (Tc)
Vgs (Max)	+5V, -16V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Bulk