IPP126N10N3G

Infineon Technologies

Produkt-Nr.:

IPP126N10N3G

Hersteller:

Paket:

PG-TO220-3

Charge:

Datenblatt:

Beschreibung:

MOSFET N-CH 100V 58A TO220-3

Menge:

Lieferung:

Zahlung:

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	2500 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs	35 nC @ 10 V
Mounting Type	Through Hole
Product Status	Active
Rds On (Max) @ Id, Vgs	12.6mOhm @ 46A, 10V
Supplier Device Package	PG-TO220-3
Vgs(th) (Max) @ Id	3.5V @ 46µA
Drain to Source Voltage (Vdss)	100 V
Series	OptiMOS™ 3
Power Dissipation (Max)	94W (Tc)
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	58A (Tc)
Vgs (Max)	±20V
Package	Bulk