IPP65R150CFDXKSA1

Infineon Technologies

Produkt-Nr.:

IPP65R150CFDXKSA1

Hersteller:

Paket:

PG-TO220-3

Charge:

Datenblatt:

Beschreibung:

MOSFET N-CH 650V 22.4A TO220-3

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	2340 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs	86 nC @ 10 V
Mounting Type	Through Hole
Product Status	Obsolete
Rds On (Max) @ Id, Vgs	150mOhm @ 9.3A, 10V
Supplier Device Package	PG-TO220-3
Vgs(th) (Max) @ Id	4.5V @ 900µA
Drain to Source Voltage (Vdss)	650 V
Series	CoolMOS™
Power Dissipation (Max)	195.3W (Tc)
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	22.4A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	IPP65R150