IPSA70R600P7SAKMA1

Infineon Technologies

Produkt-Nr.:

IPSA70R600P7SAKMA1

Hersteller:

Paket:

PG-TO251-3

Charge:

Datenblatt:

Beschreibung:

MOSFET N-CH 700V 8.5A TO251-3

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Operating Temperature	-40°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	364 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs	10.5 nC @ 400 V
Mounting Type	Through Hole
Product Status	Not For New Designs
Rds On (Max) @ Id, Vgs	600mOhm @ 1.8A, 10V
Supplier Device Package	PG-TO251-3
Vgs(th) (Max) @ Id	3.5V @ 90µA
Drain to Source Voltage (Vdss)	700 V
Series	CoolMOS™ P7
Power Dissipation (Max)	43.1W (Tc)
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	8.5A (Tc)
Vgs (Max)	±16V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	IPSA70