IPT017N12NM6ATMA1

Infineon Technologies

Produkt-Nr.:

IPT017N12NM6ATMA1

Hersteller:

Paket:

PG-HSOF-8

Charge:

Datenblatt:

Beschreibung:

OPTIMOS 6 POWER-TRANSISTOR,120V

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	11000 pF @ 60 V
Gate Charge (Qg) (Max) @ Vgs	141 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	1.7mOhm @ 150A, 10V
Supplier Device Package	PG-HSOF-8
Vgs(th) (Max) @ Id	3.6V @ 275µA
Drain to Source Voltage (Vdss)	120 V
Series	OptiMOS™ 6
Power Dissipation (Max)	3W (Ta), 395W (Tc)
Package / Case	8-PowerSFN
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	29A (Ta), 331A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	8V, 10V
Package	Tape & Reel (TR)
Base Product Number	IPT017