IPT039N15N5ATMA1

Infineon Technologies

Produkt-Nr.:

IPT039N15N5ATMA1

Hersteller:

Paket:

PG-HSOF-8

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Datenblatt:

Beschreibung:

OPTIMOS 5 POWER MOSFET

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	7700 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs	98 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	3.9mOhm @ 50A, 10V
Supplier Device Package	PG-HSOF-8
Vgs(th) (Max) @ Id	4.6V @ 257µA
Drain to Source Voltage (Vdss)	150 V
Series	OptiMOS™
Power Dissipation (Max)	3.8W (Ta), 319W (Tc)
Package / Case	8-PowerSFN
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	21A (Ta), 190A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	8V, 10V
Package	Tape & Reel (TR)