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IPT039N15N5XTMA1

Infineon Technologies

Produkt-Nr.:

IPT039N15N5XTMA1

Paket:

PG-HSOF-8

Charge:

-

Datenblatt:

-

Beschreibung:

TRENCH >=100V PG-HSOF-8

Menge:

Lieferung:

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Zahlung:

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Produkt informationen

Parameter-Info

Benutzer handbuch

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 7700 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs 98 nC @ 10 V
Mounting Type Surface Mount
Product Status Discontinued at Digi-Key
Rds On (Max) @ Id, Vgs 3.9mOhm @ 50A, 10V
Supplier Device Package PG-HSOF-8
Vgs(th) (Max) @ Id 4.6V @ 257µA
Drain to Source Voltage (Vdss) 150 V
Series OptiMOS™
Power Dissipation (Max) 319W (Tc)
Package / Case 8-PowerSFN
Technology MOSFET (Metal Oxide)
Mfr Infineon Technologies
Current - Continuous Drain (Id) @ 25°C 190A (Tc)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 8V, 10V
Package Tape & Reel (TR)
Base Product Number IPT039N