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IPW60R075CPFKSA1

Infineon Technologies

Produkt-Nr.:

IPW60R075CPFKSA1

Paket:

PG-TO247-3-1

Charge:

-

Datenblatt:

-

Beschreibung:

MOSFET N-CH 650V 39A TO247-3

Menge:

Lieferung:

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Zahlung:

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Auf Lager : 240

Minimum: 1 Vielfache: 1

Menge

Stückpreis

Ext-Preis

  • 1

    $11.7135

    $11.7135

  • 10

    $10.76255

    $107.6255

  • 100

    $9.08922

    $908.922

  • 500

    $8.085526

    $4042.763

  • 1000

    $7.416384

    $7416.384

Nicht der Preis, den Sie wollen? Senden Sie jetzt RFQ und wir werden Sie so schnell wie möglich kontaktieren.

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Produkt informationen

Parameter-Info

Benutzer handbuch

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 4000 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs 116 nC @ 10 V
Mounting Type Through Hole
Product Status Not For New Designs
Rds On (Max) @ Id, Vgs 75mOhm @ 26A, 10V
Supplier Device Package PG-TO247-3-1
Vgs(th) (Max) @ Id 3.5V @ 1.7mA
Drain to Source Voltage (Vdss) 650 V
Series CoolMOS™
Power Dissipation (Max) 313W (Tc)
Package / Case TO-247-3
Technology MOSFET (Metal Oxide)
Mfr Infineon Technologies
Current - Continuous Drain (Id) @ 25°C 39A (Tc)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube
Base Product Number IPW60R075