IPW65R095C7

Infineon Technologies

Produkt-Nr.:

IPW65R095C7

Hersteller:

Paket:

PG-TO247

Charge:

Datenblatt:

Beschreibung:

MOSFET N-CH 650V 24A TO247

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	2140 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs	45 nC @ 10 V
Mounting Type	Through Hole
Product Status	Active
Rds On (Max) @ Id, Vgs	95mOhm @ 11.8A, 10V
Supplier Device Package	PG-TO247
Vgs(th) (Max) @ Id	4V @ 590µA
Drain to Source Voltage (Vdss)	650 V
Series	CoolMOS™ C7
Power Dissipation (Max)	128W (Tc)
Package / Case	TO-247-3
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	24A (Tc)
Vgs (Max)	±20V
Package	Bulk