IPW95R130PFD7XKSA1

Infineon Technologies

Produkt-Nr.:

IPW95R130PFD7XKSA1

Hersteller:

Paket:

PG-TO247-3-41

Charge:

Datenblatt:

Beschreibung:

HIGH POWER_NEW

Menge:

Lieferung:

Zahlung:

Auf Lager : Bitte Anfrage

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Operating Temperature	-55°C ~ 150°C
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	141 nC @ 10 V
Mounting Type	Through Hole
Product Status	Active
Rds On (Max) @ Id, Vgs	-
Supplier Device Package	PG-TO247-3-41
Vgs(th) (Max) @ Id	-
Drain to Source Voltage (Vdss)	950 V
Series	CoolMOS™
Power Dissipation (Max)	227W
Package / Case	TO-247-3
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	36.5A
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube